savantic semiconductor product specification silicon npn power transistors 2sc2336 2sc2336a 2SC2336B d escription with to-220 package complement to type 2sa1006, 2sa1006a,2sa1006b applications audio frequency power amplifier high frequency power amplifier pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sc2336 180 2sc2336a 200 v cbo collector- base voltage 2SC2336B open emitter 250 v 2sc2336 180 2sc2336a 200 v ceo collector-emitter voltage 2SC2336B open base 250 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3.0 a t a =25 1.5 p t total power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2sc2336 2sc2336a 2SC2336B characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ce ( sat) collector-emitter saturation voltage i c =0.5a; i b =50ma 1.0 v v be (sat) base-emitter saturation voltage i c =0.5a ;i b =50ma 1.5 v i cbo collector cut-off current v cb =150v; i e =0 1 a i ebo emitter cut-off current v eb =3v; i c =0 1 a h fe-1 dc current gain i c =5ma ; v ce =5v 30 h fe-2 dc current gain i c =150ma ; v ce =5v 60 320 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 30 pf f t transition frequency i c =100ma ; v ce =10v 95 mhz h fe-2 classifications r q p 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2sc2336 2sc2336a 2SC2336B package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2sc2336 2sc2336a 2SC2336B
savantic semiconductor product specification 5 silicon npn power transistors 2sc2336 2sc2336a 2SC2336B
|
